DOCUMENTATION
DYE SENSITIZED SOLAR CELL (DSC) |
In the following we will describe a simple application of tiberCAD for the 1D simulation of a Dye Sensitized Solar Cell (DSC).
The basic structure of a DSC is the following:
The surface of the semiconductor is covered by a mono-layer of dye molecules which make the oxide photoactive. The mesoporous material is obtained by sintering together nanoparticles of TiO2 of 15-20 nm in diameter. The diameter of the nanoparticles is of fundamental importance to obtain an adequate porosity of the material. In fact, in order to have a high light harvesting from the dye molecules it is necessary to have a large effective area that can be obtained only with a sponge-like material. Moreover, the porosity of the semiconductor lets the electrolyte be in contact with the dye molecules.
The functioning of the DSC device is the following: when a photon is absorbed by a dye, it excites an electron which is transferred into the conduction band of the porous material. The charge transfer is extremely fast, in the order of tens of fs. Then, the electron percolates inside the porous material until it reaches the anode contact: a transparent conductive oxide (TCO). Two important facts must be noted:
DEVICE MODELHere we will see a simple 1D model of a DSC, made of two physical regions:
Two pysical Regions, TiO2 and Electrolyte are defined, which are distinguished by the different value of the parameter porosity. DSC SIMULATION MODEL
The numerical model of DSCs includes the dynamic and continuity equations for four charge carriers: the electrons in TiO2, the iodide/triiodide ions in the electrolyte and the cation. The inclusion of the cation is needed although it does not contribute directly to the current, but it is fundamental for the charge neutrality of the whole cell. We assume a Boltzmann distribution for the concentration of the charged species, both for the ions in the electrolyte and the electrons in the semiconductor. The boundary conditions are defined as an ohmic contact (anode) with an electron collection rate (kinetic rate) and an electrochemical (Pt) contact (the counter-electrode cathode). The cathode is a contact of the special type Pt (platinum): it is modeled as a Butler-Volmer equation, the only needed parameter is the exchange current. PHOTOGENERATIONFor a device under illumination we have to define a generation term. The generation term is related to the flux of photons which reaches the active TiO2 regions and the dye present in the cell. We assume a simple Lambert-Beer exponential decay for charge generation. The parameters for the generation include the vector which fixes the direction of light, the light intensity (in units of Sun) the absorption spectrum of the used dye, the spectrum of the light source (the default is the standard 1.5 AM sun spectrum). I-V CHARACTERISTIC UNDER ILLUMINATIONTwo sweeps are needed for the calculation of the entire I-V characteristic under illumination.
The first sweep is needed to perform the transition from dark condition to full short-circuit condition under illumination. The second sweep is on the bias at the anode and computes the I-V characteristic of the DSC under illumination. In case of dark simulation (application of an external bias without illumination) the first sweep is not needed. Here are a picture of the two sweeps performed in the calculation. For every working point, nodal and elemental quantities are calculated and saved. The nodal quantities include electrochemical potential, electrostatic potential, density and recombination concentration profiles inside the cell. The elemental quantities include the currents components (remind that in a DSC the total current is the sum of three currents for the electrons, iodide and triiodide ions respectively) and the electrostatic field. Note that in a DSC the current is fundamentally diffusion driven, while the electric field and the consequent drift current are rather small. The figure below shows the potential profiles for the ionic species and the electrostatic potential in short-circuit condition, along the cell. Here are current contributions, that is the values of the iodide, triiodide and electron current components along the cell (at short-circuit condition). Finally, this is the calculated IV characteristic of the cell. |