Publications on tiberCAD multiscale simulation tool

• Handbook of Optoelectronic Device Modeling and Simulation (Two-Volume Set)
  Editor Joachim Piprek
  October 26, 2017 by CRC Press
  ISBN 9781498749381 - CAT# K27145
  Series in Optics and Optoelectronics

• Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Device
  Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, Oleksii Kozak, Serhiy V. Kondratenko, Giovanna Trevisi, Paola Frigeri, Enos Gombia, Sergii R. Lavoryk, Iuliia Golovynska, Tymish Y. Ohulchanskyy and Junle Qu
  Nanoscale Res Lett. 2017 Oct 5; 12(1):559 (2017)

• Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes
  Daniele Barettin, Matthias Auf der Maur, Aldo di Carlo, Alessandro Pecchia, Andrei F Tsatsulnikov, Wsevolod V Lundin, Alexei V Sakharov, Andrei E Nikolaev, Maxim Korytov, Nikolay Cherkashin, Martin J Hÿtch and Sergey Yu Karpov
  Nanotechnology 28(27):275201 (2017)

• Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes
  Daniele Barettin, Matthias Auf der Maur, Aldo di Carlo, Alessandro Pecchia, Andrei F Tsatsulnikov, Alexei V Sakharov, Wsevolod V Lundin, Andrei E Nikolaev, Sergey O Usov, Nikolay Cherkashin, Martin J Hÿtch and Sergey Yu Karpov
  Nanotechnology 28(1):015701 (2017)

• Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires
  M. Musolino, A. Tahraoui, L. Geelhaar, F. Sacconi, F. Panetta, C. De Santi, M. Meneghini and E. Zanoni
  PHYSICAL REVIEW APPLIED 7, 044014 (2017)

• Photoluminescence monitoring of oxide formation and surface state passivation on InAs quantum dots exposed to water vapor
  Giovanna Trevisi, Luca Seravalli and Paola Frigeri
  Nano Research 2016, 9(10): 3018–3026 (2016)

• Multiscale Approaches for the Simulation of Optoelectronic Devices
  Matthias Auf der Maur
  Journal of Green Engineering 5(4):133-156 (2016)

• Atomistic simulation of GaAs/AlGaAs quantum dot/ring nanostructures
  Rodrigues, W., Auf Der Maur, M., Di Carlo, A., Pecchia, A., Barettin, D., Sanguinetti, S.
  IEEE-NANO 2015 - 15th International Conference on Nanotechnology, art. no. 7388735, pp. 809-812 (2016)

• Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes
  Sacconi, F., Panetta, F., Auf Der Maur, M., Di Carlo, A., Pecchia, A., Musolino, M., Tahraoui, A., Geelhaar, L., Riechert, H.
  IEEE-NANO 2015 - 15th International Conference on Nanotechnology, art. no. 7388942, pp. 1551-1554 (2016)

• Realistic model of LED structure with InGaN quantum-dots active region
  Barettin, D., Auf Der Maur, M., Pecchia, A., Rodrigues, W., Tsatsulnikov, A.F., Sakharov, A.V., Lundin, W.V., Nikolaev, A.E., Cherkashin, N., Hytch, M.J., Karpov, S.Y., Di Carlo, A.
  IEEE-NANO 2015 - 15th International Conference on Nanotechnology, art. no. 7388939, pp. 1543-1546 (2016)

• Broadband light sources based on InAs/InGaAs metamorphic quantum dots
  L. Seravalli, M. Gioannini, F. Cappelluti, F. Sacconi, G. Trevisi, and P. Frigeri
  Journal of Applied Physics 119, 143102 (2016)

• Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations
  Matthias Auf der Maur, Alessandro Pecchia, Gabriele Penazzi, Walter Rodrigues, and Aldo Di Carlo
  Phys. Rev. Lett. 116, 027401 (2016)

• Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules
  Daniele Barettin, Matthias Auf der Maur, Roberta De Angelis, Paolo Prosposito, Mauro Casalboni, and Alessandro Pecchia
  Journal of Applied Physics 117, 094306 (2015)

• Multiscale approaches for the simulation of InGaN/GaN LEDs
  Matthias Auf der Maur
  Journal of Computational Electronics, Volume 14, Issue 2, pp 398-408 (June 2015)

• 3-D Simulation and Optimization of Organic Solar Cell With Periodic Back Contact Grating Electrode
  A. H. Fallahpour, G. Ulisse, M. Auf der Maur, A. Di Carlo, and F. Brunetti
  IEEE Journal of Photovoltaics, vol. 5, no. 2, 591 (March 2015)

• The real TiO2/HTM interface of solid-state dye solar cells: role of trapped states from a multiscale modelling perspective
  Alessio Gagliardi,Matthias Auf der Maur, Desiree Gentilini, Fabio di Fonzo, Agnese Abrusci, Henry J. Snaith, Giorgio Divitini, Caterina Ducati and Aldo Di Carlo
  Nanoscale, 7, 1136 (2015)

• Effect of electrode’s geometric shape, thickness and porosity on the performance of dye sensitized solar cell
  Dipal B. Patel, Khushbu R. Chauhan and Indrajit Mukhopadhyay
  IJLTEMAS, Volume III, Issue I, ISSN 2278 - 2540 (January 2014)

• Optoelectronic simulation and thickness optimization of energetically disordered organic solar cells
  H. Fallahpour, A. Gagliardi, D. Gentilini, A. Zampetti, F. Santoni, M. Auf der Maur, A. Di Carlo
  Journal of Comp. Electronics, Volume 13, Issue 44, pp 933-942 (December 2014)

• Modeling and simulation of energetically disordered organic solar cells
  H. Fallahpour, A. Gagliardi, F. Santoni, D. Gentilini, A. Zampetti, M. Auf der Maur and A. Di Carlo
  J. Appl. Phys. 116, 184502 (2014)

• Charge trapping models of resistance switching in organic bistable devices with embedded nanoparticles
  Francesco Santoni, Alessio Gagliardi, Matthias Auf der Maur, Aldo Di Carlo
  Organic Electronics 15, 2792–2801 (2014)

• The relevance of correct injection model to simulate electrical properties of organic semiconductor
  Francesco Santoni, Alessio Gagliardi, Matthias Auf der Maur, Aldo Di Carlo
  Organic Electronics 15, 1557–1570 (2014)

• Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting Diodes
  M. Auf der Maur, B. Galler, I. Pietzonka, M. Strassburg, H. Lugauer and A. Di Carlo
  Appl. Phys. Lett. 105, 133504 (2014)

• Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results
  Daniele Barettin, Roberta De Angelis, Paolo Prosposito, Matthias Auf der Maur, Mauro Casalboni and Alessandro Pecchia
  Nanotechnology 25 (2014) 195201 (9pp)

• Coupling atomistic and continuous media models for electronic device simulation
  Matthias Auf der Maur, Alessandro Pecchia, Gabriele Penazzi, Fabio Sacconi, Aldo Di Carlo
  Journal of Computational Electronics, Volume 12, Issue 4, pp 553-562 (2013)

• Strain evolution in GaN nanowires: From free-surface objects to coalesced Templates
  M. Hugues, P. A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur et al.
  J. Appl. Phys. 114, 084307 (2013)

• AlGaN/GaN HEMT degradation: An Electro-Thermo-Mechanical Simulation
  M. Auf der Maur, A. Di Carlo
  IEEE Transactions on Electron Devices, Vol. 60, Issue 10 (2013), pages 3142-3148

• Wetting layer states in low densityInAs/InGaAs quantum dots from sub-critical InAs coverages
  L. Seravalli, G. Trevisi, P. Frigeri, F. Rossi, E. Buffagni and C. Ferrari
  J. Phys. D: Appl. Phys. 46 (2013) 315101

• Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures
  L. Seravalli, G. Trevisi, and P. Frigeri
  J. Appl. Phys. 114, 184309 (2013)

• Optoelectronic Properties of Nanocolumn InGaN/GaN LEDs
  Fabio Sacconi, Matthias Auf der Maur, Aldo Di Carlo
  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 11, NOVEMBER 2012

• The Multiscale Paradigm in Electronic Device Simulation
  Matthias Auf der Maur, Gabriele Penazzi, Giuseppe Romano, Fabio Sacconi, Alessandro Pecchia, and Aldo Di Carlo
  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 5, MAY 2011

• Calculation of optical properties of a quantum dot embedded in a GaN/AlGaN nanocolumn
  G. Penazzi A. Pecchia, F. Sacconi, A. Di Carlo
  Superlattices and Microstructures 47 (2010) 123-128

• Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 µm: Effects of InGaAs capping
  L. Seravalli, C. Bocchi, G. Trevisi and P. Frigeri
  J. Appl. Phys. 108, 114313 (2010)

• Concurrent multiscale simulation of electronic devices
  M. Auf der Maur, F. Sacconi, G. Penazzi, G. Romano, M. Povolotskyi, A. Pecchia and A. Di Carlo
  Journal of Computational Electronics Volume 9, Numbers 3-4, 262-268

• Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well
  F. Stokker-Cheregi, A. Vinattieri, E. Feltin, D. Simeonov, J.-F. Carlin, R. Butté, N. Grandjean, F. Sacconi, M. Povolotskyi, A. Di Carlo, M. Gurioli
  PHYSICAL REVIEW B 79, 245316 (2009)

• Elasticity theory of pseudomorphic heterostructures grown on substrates of arbitrary thickness
  Michael Povolotskyi and Aldo Di Carlo
  JOURNAL OF APPLIED PHYSICS 100, 063514 (2006)